PROVISIONAL
Wisdom
Semiconductor
WFW10N80
N-Channel MOSFET
Features
■
■
■
■
■
R
DS(on)
(Max 1.05
Ω
)@V
GS
=10V
Gate Charge (Typical 55nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
Symbol
●
2. Drain
◀
1. Gate
▲
●
●
3. Source
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies.
TO-247
G DS
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG,
T
J
T
L
Drain to Source Voltage
Continuous Drain Current(@T
C
= 25
°C)
Continuous Drain Current(@T
C
= 100
°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T
C
= 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 2)
(Note 1)
(Note 3)
(Note 1)
Parameter
Value
800
10
6.3
40
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
±
30
960
26
4.0
260
2.08
- 55 ~ 150
300
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Value
Min.
-
-
-
Typ.
-
0.24
-
Max.
0.48
-
40
Units
°C/W
°C/W
°C/W
1/2
Copyright@Wisdom Semiconductor Inc., All rights reserved.
WFW10N80
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
Δ
BV
DSS
/
Δ
T
J
I
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
coefficient
Drain-Source Leakage Current
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
V
GS
= 0V, I
D
= 250uA
I
D
= 250uA, referenced to 25 °C
V
DS
= 800V, V
GS
= 0V
V
DS
= 640V, T
C
= 125 °C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
800
-
-
-
-
-
-
1.0
-
-
-
-
-
-
10
100
100
-100
V
V/°C
uA
uA
nA
nA
( T
C
= 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
I
GSS
On Characteristics
V
GS(th)
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source On-state Resis-
tance
V
DS
= V
GS
, I
D
= 250uA
V
GS
=10 V, I
D
= 5A
3.0
-
-
0.85
5.0
1.05
V
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0 V, V
DS
=25V, f = 1MHz
-
-
-
2100
220
25
-
-
-
pF
Dynamic Characteristics
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge(Miller Charge)
V
DS
=640V, V
GS
=10V, I
D
=10A
(Note 4, 5)
-
V
DD
=400V, I
D
=10A, R
G
=25Ω
(Note 4, 5)
50
120
130
80
55
15
25
-
-
-
-
-
-
-
nC
ns
-
-
-
-
-
-
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
※
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 18.0mH, I
AS
=10A, V
DD
= 50V, R
G
= 25Ω , Starting T
J
=
25°C
3. I
SD
≤
10A, di/dt
≤
200A/us, V
DD
≤
BV
DSS
, Starting T
J
=
25°C
4. Pulse Test : Pulse Width
≤
300us, Duty Cycle
≤
2%
5. Essentially independent of operating temperature.
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
I
S
=10A, V
GS
=0V
I
S
=10A, V
GS
=0V, dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
800
10
Max.
10
40
1.4
-
-
Unit.
A
V
ns
uC
2/2
Copyright@Wisdom Semiconductor Inc., All rights reserved.
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